![]() The way of controlling power motor via simple push button realizes the use 2N3055 as a switching device and in the same way we can use 2N3055 in other transistor circuits. ![]() With transistor going to high resistance state in OFF mode, the collector current also becomes zero bringing motor to stop. This motor will keep rotating until there will be base current.Īfter a certain time when the button is released the base current becomes zero and the transistor gets turned OFF. Having transistor acting as short circuit in ON state there will be collector current which flows through motor making it rotate. With this closed loop a current flows through base of transistor and with base current flow the transistor gets turned ON. When the button is pressed at certain time, the voltage V2 forms a closed loop with base-emitter of transistor as can be seen in circuit diagram. With no base current the transistor acts as open circuit and the entire supply voltage V1 will appears across it. Under initial conditions the button will be open and no current flows through the base of transistor. The 100Ω resistor is provided for limiting the current through base. ![]() The trigger source and power source must share a common ground for the circuit to work. Here we are going to use 2N3055 as a simple switching device to drive a motor and is in common emitter configuration.Īs show in circuit we are using a motor as the load and the gate signal for turning ON the transistor is provided by 5V source with button being the triggering device. The 2n3055 is an NPN transistor functions like a normal transistor that includes three terminals such as emitter, base, and collector. The device has good amplifying factor and also the gain is almost linear making 2N3055 one of best solution for power amplifiers.Īs mentioned earlier the 2N3055 can be used for any NPN transistor applications but for understanding the functioning of device let us consider a simple application circuit as shown below. 2N3055 is one of the basic transistors available in the market for cheap and with features being suited for many applications.ĢN3055 is also used in audio power amplifiers. Operating temperature range: -65✬ to +200✬ĢN6673, 2N6675, complementary pair- MJ2955ĢN3055 is preferred when you want a simple switching device for medium power loads.Maximum voltage across collector and base: 100V DC.Maximum current allowed through base: 7A DC.Maximum voltage across base and emitter: 7V DC.Maximum current allowed trough collector: 15A DC.Maximum voltage across collector and emitter: 60V DC.Low collector-emitter saturation voltage. ![]() (low-power transistors in metal cases. A heatsink is a relatively large mass of good thermally conductive (heat conductive) material, such as aluminium. Also, conduction occurs when the movement of electrons and the charge carriers. Mounting a transistor (2N3055) to heatsink. Therefore, any small current present at the base terminal controls a chunk of energy in the remaining terminals. Normally used as trigger to turn ON the transistor 2n3055 is a general-purpose NPN transistor. The pin configuration of 2N3055 is given below. Like any other transistor 2N3055 has three pins namely EMITTER, BASE and COLLECTOR. The device is designed for general purpose switching and amplifier applications. PO Box, Afghanistan, Africa, American Samoa, Anguilla, Bahamas, Barbados, Belarus, Bermuda, Bolivia, Botswana, Cayman Islands, Central African Republic, Central America and Caribbean, Chad, Comoros, Cook Islands, Cuba, Republic of, Côte d'Ivoire (Ivory Coast), Djibouti, Ecuador, El Salvador, Europe, Falkland Islands (Islas Malvinas), Fiji, French Polynesia, Gambia, Guam, Guernsey, Guinea-Bissau, Guyana, Honduras, Jamaica, Jersey, Kiribati, Korea, North, Libya, Macedonia, Madagascar, Malawi, Maldives, Marshall Islands, Mayotte, Micronesia, Moldova, Mongolia, Morocco, Nauru, Nepal, New Caledonia, New Zealand, Nicaragua, Niue, North America, Northern Territory, Palau, Papua New Guinea, Paraguay, QLD Far North, QLD South East, Reunion, Russian Federation, Rwanda, Saint Pierre and Miquelon, San Marino, Senegal, Sierra Leone, Solomon Islands, Somalia, South America, Sudan, Suriname, Svalbard and Jan Mayen, Swaziland, Syria, Tasmania, Tonga, Trinidad and Tobago, Tunisia, Tuvalu, Uruguay, Vanuatu, Venezuela, Virgin Islands (U.S.2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. ![]()
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